Blog Posts Tagged Semiconductor Module
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Three Semiconductor Device Models Using the Density-Gradient Theory
You can use the density-gradient theory to model semiconductor devices. Here are 3 examples: a Si inversion layer, Si nanowire MOSFET, and InSb p-channel FET.
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Intro to Density-Gradient Theory for Semiconductor Device Simulation
The density-gradient theory is a computationally efficient way to include quantum confinement in the conventional drift-diffusion formulation commonly used for simulating semiconductor devices.
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Simulating Radiation Effects in Semiconductor Devices
Analyzing radiation effects in semiconductor devices is an important capability for consumer electronics, medical imaging, nuclear engineering, aerospace, and a wide range of other industries.
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Hydrodynamic Thermal Transport in the Kinetic-Collective Model
F. Xavier Alvarez from the Universitat Autònoma de Barcelona (UAB) discusses using COMSOL Multiphysics® to model heat transfer at the nanoscale and better understand transport processes.
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How to Simulate the Carrier Dynamics in Semiconductor Devices
Learn how to simulate carrier dynamics in semiconductor devices with 2 examples: reverse recovery and forward recovery PIN rectifier models.
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How to Model the Interface Trapping Effects of a MOSCAP
Looking to analyze interface trapping effects in a MOSCAP? Learn how to use a feature in the Semiconductor Module that enables you to add charging and carrier capture/release effects to a model.
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Simulating the Tunneling Current Across a Graded Heterojunction
Interested in semiconductor design? Get an intro to the theory behind quantum tunneling as well as a demonstration of simulating the tunneling current across a graded heterojunction.
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Self-Consistent Schrödinger-Poisson Results for a Nanowire Benchmark
This benchmark model of a GaAs nanowire validates the Schrödinger-Poisson Equation multiphysics interface, which is useful for modeling systems with quantum-confined charge carriers.