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diode model in semiconductor model library
Posted 27 set 2011, 10:06 GMT-4 Modeling Tools & Definitions, Parameters, Variables, & Functions 2 Replies
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Hello
I have an important Question about one part of
Comsol model for diode and semiconductor part at drift diffusion
model; my Question is that in the one dimensional model for diode in
comsol the expresion for diode in the boundary
integration variables in 2D model in Comsol we write : IC="q*(lm2-lm3)" why we define
current in this form, that we define the lm2 or lm3 in the boundary
condition in the weak form of boundary condition!!
thanks in advance
I have an important Question about one part of
Comsol model for diode and semiconductor part at drift diffusion
model; my Question is that in the one dimensional model for diode in
comsol the expresion for diode in the boundary
integration variables in 2D model in Comsol we write : IC="q*(lm2-lm3)" why we define
current in this form, that we define the lm2 or lm3 in the boundary
condition in the weak form of boundary condition!!
thanks in advance
2 Replies Last Post 27 set 2013, 01:54 GMT-4