Note: This discussion is about an older version of the COMSOL Multiphysics® software. The information provided may be out of date.
Discussion Closed This discussion was created more than 6 months ago and has been closed. To start a new discussion with a link back to this one, click here.
GaAs structure with a geometrical constriction
Posted 11 giu 2014, 05:35 GMT-4 Version 4.4 1 Reply
Please login with a confirmed email address before reporting spam
Dear Sirs,
I’m a student at the joint lab CNR-University of Salento in Lecce. I am trying to use an evaluation version of Comsol 4.4 with the Semiconductor Module to understand if it can be useful to simulate the electron transport in a AlGaAs/GaAs device with a two dimensional electron gas at the interface, although for the moment I am just considering a GaAs structure with a geometrical constriction. I was able to implement a model which show me the main voltage drop on the constriction as I expect. However in my final model, I would need to consider also the potential effect suffered by electronic distribution. In my situation, physics suggests us that electron collision is governed by principle of conservation of energy : Ef= 1/2 mv^2+ V. Evidently electron mobility is a circular variable. It is possible to afford this problem with Comsol ?
I had tried to solve it through the following procedure :
1) I have introduced a new variable p onto which the potential is mapped;
2) I have used a weak contribution and auxiliary dependent variable to map the computed electric potential to the new variable p;
3) Finally I defined electronic mobility as (global) function of this new variable p.
What do you think about my argument ?
Nevertheless, while I was defining the global function ((2/m)*(Ef-q*p))^0.5)/(((Vx)^2+(Vy)^2)^0.5) (I’m in 2D) I noted that electronic mobility depends not only on variable p but also on its spatial derivative.
Is this a problem for comsol ?
I will look forward to receive your feedback,
Meanwhile I thank you in advace,
Best regards,
Luciano
I’m a student at the joint lab CNR-University of Salento in Lecce. I am trying to use an evaluation version of Comsol 4.4 with the Semiconductor Module to understand if it can be useful to simulate the electron transport in a AlGaAs/GaAs device with a two dimensional electron gas at the interface, although for the moment I am just considering a GaAs structure with a geometrical constriction. I was able to implement a model which show me the main voltage drop on the constriction as I expect. However in my final model, I would need to consider also the potential effect suffered by electronic distribution. In my situation, physics suggests us that electron collision is governed by principle of conservation of energy : Ef= 1/2 mv^2+ V. Evidently electron mobility is a circular variable. It is possible to afford this problem with Comsol ?
I had tried to solve it through the following procedure :
1) I have introduced a new variable p onto which the potential is mapped;
2) I have used a weak contribution and auxiliary dependent variable to map the computed electric potential to the new variable p;
3) Finally I defined electronic mobility as (global) function of this new variable p.
What do you think about my argument ?
Nevertheless, while I was defining the global function ((2/m)*(Ef-q*p))^0.5)/(((Vx)^2+(Vy)^2)^0.5) (I’m in 2D) I noted that electronic mobility depends not only on variable p but also on its spatial derivative.
Is this a problem for comsol ?
I will look forward to receive your feedback,
Meanwhile I thank you in advace,
Best regards,
Luciano
1 Reply Last Post 11 giu 2014, 05:43 GMT-4