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Charge Distribution in Semiconductor

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Hello,

I'm trying to model the distribution of free electrons in a thin slab of n-type silicon placed near a fixed (negative) charge. I'm using electrostatics and transport of diluted species. My hope is for the electrons in the slab to rearrange in reaction to the electric field -- they should move away from the fixed, negative charge -- and thereby change perturb that field nearby.

However, I'm having trouble getting the electron concentration to respond in any reasonable way. My simulation only solves if I specify concentration boundary conditions to the boundaries of the slab of silicon, but when I set them to be equal the electron concentration in the interior is homogeneous. Are there specific boundary conditions I should be using, or is it possible I'm going about this in entirely the wrong way? I'm attaching my model in case it is helpful.

Thanks!
Will


0 Replies Last Post 5 ott 2014, 21:47 GMT-4
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Hello William Whitney

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