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Small signal analysis of a semiconductor device
Posted 19 ott 2015, 13:13 GMT-4 0 Replies
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I am using the 'Small signal analysis, frequency domain' study to do small signal analysis of a metal-insulator-semiconductor capacitor in 2D.
I have a problem understanding the result of the simulation. I would like to get the ac variation of charge within the semiconductor. For getting that result I evaluate the pre-defined variable 'semi.rho' (space charge density) with a Surface integration over the entire semiconductor domain with 'expression evaluated for' selected to harmonic perturbation and with compute differential selected.
The values that I get for the space charge density are complex (Theoretically they should be real valued). What is the meaning of a complex space charge density value (I mean what do the real part and imaginary part signify)?
Is this the correct way to get the ac variation of charge?
Thanks a lot in advance
Aravind
Hello Aravind Sivalingam
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