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Electron Beam Crystallization of Amorphous Silicon Thin Films
Published in 2016
A promising method for low cost production of efficient silicon thin film solar cells is the electron beam physical vapor deposition (EB-PVD) of high purity amorphous silicon (a-Si) layers with high deposition rates up to 300 nm/s [1] followed by crystallization. This study focuses on EB crystallization of deposited a-Si films in the solid phase regime and justifies observed experimental results by simulations. The simulations were carried out to clarify delamination phenomena. Therefore, a structural and thermal investigation of the pre-stressed substrate-layer-system was carried out using different speeds of the EB for a given line pattern and absorbed EB power-depth-relation.
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