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Breakdown study thin film oxide
Posted 10 feb 2019, 15:43 GMT-5 Electromagnetics, Low-Frequency Electromagnetics, Semiconductor Devices Version 5.4 0 Replies
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Hi all,
I am intersted to study electric field profile in the thin film oxide before breakdown. I have a device with oxide film sandwiched between metal and semiconductor (schematic attached). I do not want to use the thin film insulator gate approx, instead i wish to explicitly model it coupled with the semiconductor. Is it possible to do it?
I tried coupling electric current physics froom ac/dc module with the semiconductor physics. It says "no coupling feature available for the selected physics interfaces". Can someone please help me out?
You can reach me at abhinav1.shukla@gmail.com
Thanks, Abhinav
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Hello Abhinav Shukla
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