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using SiO2 in semiconductor module

Posted 28 lug 2014, 09:56 GMT-4 Semiconductor Devices, Results & Visualization Version 5.0 3 Replies

Anup Kumar

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Hi everyone,

I want to know the general value of semiconductor material parameters of SiO2 when used in semiconductor module( as in mosfet). When I am simulating a mosfet model with SiO2 as dielectric material (not the thin insulator gate), I get following error.

Undefined value found.
- Detail: Undefined value found in the equation residual vector.
There are 90 degrees of freedom giving NaN/Inf in the vector for the variable comp1.Ne.
at coordinates: (1.11001e-06,9.94028e-07), (1.13e-06,9.94023e-07), (1.15e-06,9.94019e-07), (1.17001e-06,9.94015e-07), (1.19001e-06,9.94007e-07), ...
There are 90 degrees of freedom giving NaN/Inf in the vector for the variable comp1.Ph.
at coordinates: (1.11001e-06,9.94028e-07), (1.13e-06,9.94023e-07), (1.15e-06,9.94019e-07), (1.17001e-06,9.94015e-07), (1.19001e-06,9.94007e-07), ...
There are 90 degrees of freedom giving NaN/Inf in the vector for the variable comp1.V.
at coordinates: (1.11001e-06,9.94028e-07), (1.13e-06,9.94023e-07), (1.15e-06,9.94019e-07), (1.17001e-06,9.94015e-07), (1.19001e-06,9.94007e-07), ...

Regards
Anup Kumar

3 Replies Last Post 27 gen 2016, 03:42 GMT-5

Pieter Westerik

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Posted: 1 decade ago

Can you maybe upload your model?

Anup Kumar

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Posted: 1 decade ago

Hello Pieter,

Thank you for your response. Lately, I figured out that the error was not due to wrong set of parameter values but insufficiently dense messing in SiO2. Now, I am able to simulate my model. Thank you once again.

Regards
Anup Kumar

Tarusri Raja

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Posted: 9 years ago

I had got a similar error while simulating the model for a Carbon Nanotube FET.
I have used SiO2 as insulating material. I am getting the following error while simulating the model:
Undefined value found.
- Detail: Undefined value found in the equation residual vector.
There are 568 degrees of freedom giving NaN/Inf in the vector for the variable comp1.Ne.
at coordinates: (2.40029e-006,8.49328e-007), (2.39973e-006,8.49311e-007), (2.40039e-006,8.48114e-007), (2.39968e-006,8.48129e-007), (2.40035e-006,8.46792e-007), ...
There are 568 degrees of freedom giving NaN/Inf in the vector for the variable comp1.Ph.
at coordinates: (2.40029e-006,8.49328e-007), (2.39973e-006,8.49311e-007), (2.40039e-006,8.48114e-007), (2.39968e-006,8.48129e-007), (2.40035e-006,8.46792e-007)

Kindly help me in debugging the error.
Thank you in advance.

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using SiO2 in semiconductor module

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