Discussion Closed This discussion was created more than 6 months ago and has been closed. To start a new discussion with a link back to this one, click here.
Charge Distribution in Semiconductor
Posted 5 ott 2014, 21:47 GMT-4 Low-Frequency Electromagnetics, Chemical Reaction Engineering, Materials, Modeling Tools & Definitions, Parameters, Variables, & Functions 0 Replies
Please login with a confirmed email address before reporting spam
I'm trying to model the distribution of free electrons in a thin slab of n-type silicon placed near a fixed (negative) charge. I'm using electrostatics and transport of diluted species. My hope is for the electrons in the slab to rearrange in reaction to the electric field -- they should move away from the fixed, negative charge -- and thereby change perturb that field nearby.
However, I'm having trouble getting the electron concentration to respond in any reasonable way. My simulation only solves if I specify concentration boundary conditions to the boundaries of the slab of silicon, but when I set them to be equal the electron concentration in the interior is homogeneous. Are there specific boundary conditions I should be using, or is it possible I'm going about this in entirely the wrong way? I'm attaching my model in case it is helpful.
Thanks!
Will
Attachments:
Hello William Whitney
Your Discussion has gone 30 days without a reply. If you still need help with COMSOL and have an on-subscription license, please visit our Support Center for help.
If you do not hold an on-subscription license, you may find an answer in another Discussion or in the Knowledge Base.