La Galleria delle Applicazioni raccoglie un'ampia varietà di tutorial e di app dimostrative realizzati con COMSOL Multiphysics in diversi ambiti applicativi, inclusi quelli elettrico, meccanico, fluidico e chimico. E' possibile scaricare i file dei modelli e delle app demo pronti all'uso e le istruzioni step-by-step per costruirli, e utilizzarli come punto di partenza per le proprie simulazioni.
Lo strumento di Ricerca Rapida permette di trovare i modelli che si riferiscono alla propria area di interesse.
Si noti che molti degli esempi qui presentati sono accessibili anche tramite le Librerie delle Applicazioni incorporate nel software COMSOL Multiphysics® e disponibili dal menu File.
This model shows how to add several linked mobility models to the simple MOSFET example. Per saperne di più
The metal-silicon-oxide (MOS) structure is the fundamental building block for many silicon planar devices. Its capacitance measurements provide a wealth of insight into the working principles of such devices. This tutorial constructs a simple 1D model of a MOS capacitor (MOSCAP). Both ... Per saperne di più
This model calculates the current and charge characteristics of a floating gate Electrically Erasable Programmable Read-Only Memory (EEPROM) device. A stationary study demonstrates the effects of varying the charge stored on the floating gate by computing Current-Voltage curves as a ... Per saperne di più
This model shows how to compute the AC characteristics of a MOSFET. Both the output conductance and the transconductance are computed as a function of the drain current. Per saperne di più
This tutorial compares experimental data from the literature with a COMSOL model of a MOSCAP with interface traps (surface states). The Trap-Assisted Surface Recombination feature is used to simulate the effects of the trap charges and the processes of carrier capturing and emitting by ... Per saperne di più
This benchmark model computes the valence band structure of an unstrained and a strained bulk GaN wurtzite crystal, as a tutorial for users who wish to set up multiple wave function components with the Schrödinger Equation interface. The model follows the formulation given in the ... Per saperne di più
This tutorial simulates the turn-off transient (reverse recovery) of a simple PIN diode with an inductive load, loosely based on the book "Fundamentals of Power Semiconductor Devices" by B. J. Baliga (p. 256, 2008 edition). Unlike the book, which assumes an initial constant current ramp ... Per saperne di più
This tutorial performs steady-state and transient analysis of the response of a PIN diode to constant and pulsed radiation, respectively. The effect of radiation is modeled as spatially uniform generation of electron-hole pairs within the device. At high dose rates the separation of the ... Per saperne di più
The metal-silicon-oxide (MOS) structure is the fundamental building block for many silicon planar devices. Its capacitance measurements provide a wealth of insight into the working principles of such devices. This tutorial constructs a simple 1D model of a MOS capacitor (MOSCAP). Both ... Per saperne di più
This 3D model of a nanowire MOSFET employs the density-gradient theory to add the effect of quantum confinement to the conventional drift-diffusion formulation, without requiring excessively high computational costs. The oxide layer is simulated explicitly with geometric domains, and ... Per saperne di più