Trench-Gate IGBT 2D
Application ID: 101321
In this first half of a two-part example, a 2D model of a trench-gate IGBT is built, which will be extended to 3D in the second half. In general, it is the most efficient to start with a 2D model to make sure everything works as expected, before extending it to 3D. The Caughey–Thomas mobility model is combined with the Klaassen unified mobility model to account for velocity saturation and phonon, impurity, and carrier–carrier scattering. The contact resistance option of metal contact boundary conditions is used to implement the mixed-mode simulation with parasitic resistance at the collector and emitter as mentioned in the reference paper. The computed collector current density as a function of the collector voltage agrees reasonably well with the published result.
This model example illustrates applications of this type that would nominally be built using the following products:
however, additional products may be required to completely define and model it. Furthermore, this example may also be defined and modeled using components from the following product combinations:
The combination of COMSOL® products required to model your application depends on several factors and may include boundary conditions, material properties, physics interfaces, and part libraries. Particular functionality may be common to several products. To determine the right combination of products for your modeling needs, review the Tabella delle Funzionalità and make use of a free evaluation license. The COMSOL Sales and Support teams are available for answering any questions you may have regarding this.